PZ1721B12U

The PZ1721B12U is designed as NPN transistor for use in a common-base, class-B, wideband amplifier under CW conditions in military and professional applications.

PZ1721B12U has five features. The first one is interdigitated structure giving a high emitter efficiency. The next one is diffused emitter ballasting resistors capable of withstanding a high VSWR and providing excellent current sharing. The next one is gold metallization ensuring excellent stability of the characteristics and giving a prolonged working life. The next one is multicell geometry giving good balance of dissipated power and low thermal resistance. The next one is it use the 5GHz technology. That are all the main features.

Some absolute maximum ratings of PZ1721B12U have been concluded into several points as follow. The first one is about its collector to base voltage which would be 40V. The next one is about itc collector to emitter voltage, Rbe=0 which would be max 35V. The next one is about its collector to emitter voltage open base which would be max 15V. The next one is about its emitter to base voltage, open collector which would be max 3.0V. The next one is about its collector current which would be max 2A. The next one is about its total power dissipation at Tmb <= 75°C which would be max 27W. The next one is about its storage temperature range which would be from -65°C to +200°C. The next one is about its operating junction temperature which would be max 200°C. The next one is about its soldering temperature at 0.2mm from the case which would be max 235°C. The next one is about its thermal resistance which would be max 4K/W from juction to mounting base and would be max 0.2K/W from mounting base to heatsink. That are all the main specifications above. And so on. For more information please contact us.