Features: `BOSFET Power IC `1010 Operations `25sec Operating Time `Low Output Capacitance `0.2Volt Thermal Offset `Offset Independent of Input Drive `3 milliwatts Pick-Up Power `1000V/sec dv/dt`Bounce-Free `8-pin DIP Package `-40°C to 85°C`UL recognized DescriptionThe Photovoltaic AC Relay (PVA) P...
PVA30: Features: `BOSFET Power IC `1010 Operations `25sec Operating Time `Low Output Capacitance `0.2Volt Thermal Offset `Offset Independent of Input Drive `3 milliwatts Pick-Up Power `1000V/sec dv/dt`Boun...
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The Photovoltaic AC Relay (PVA) PVA30 is a single-pole, normally open solid state replacement for electro-mechanical relays used for general purpose switching of analog signals. PVA30 utilizes as an output switch a unique bidirectional (AC or DC) MOSFET power IC termed a BOSFET. The BOSFET PVA30 is controlled by a photovoltaic generator of novel construction, which is energized by radiation from a dielectrically isolated light emitting diode (LED).
The PVA30 series combines very low solid state output capacitance, very high off-state resistance and very fast response. These Photovoltaic Relays are designed specifically to accurately switch low-level signals in highperformance instrumentation systems.
The PVA30 overcomes the limitations of both conventional and reed electromechanical relays by offering the solid state advantages of long life, high operating speed, low pick-up power, bounce-free operation, low thermal voltages and miniaturization. These advantages allow product improvement and design innovations in many applications such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition.
The PVA30 series can switch analog signals from thermocouple level to 300 volts peak AC or DC polarity. Signal frequencies into the RF range are easily controlled and switching rates up to 25kHz are achievable.
The extremely small thermally generated offset voltages allow increased measurement accuracies. The critical output semiconductors are completely shielded from the infra-red radiation of the input LED. Therefore, photocurrents in the output BOSFET are nonexistent and there is not an output offset resulting from radiation from the input LED drive.
Unique silicon technology developed by International Rectifier forms the heart of the PVA. The monolithic BOSFET contains a bidirectional N-channel power MOSFET output structure. In addition, this power IC chip has input circuitry for fast turn-off and gate protection functions. This section of the BOSFET chip utilizes both bipolar and MOS technology to form NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors.
The photovoltaic generator similarly PVA30 utilizes a unique International Rectifier alloyed multijunction structure. The excellent current conversion efficiency of this technique results in the very fast response of the PVA microelectronic power IC relay.
This advanced semiconductor technology has created a radically new control device. Designers can now develop switching systems to new standards of electrical performance and mechanical compactness.