PUMD6

Features: · Transistors with different polarity, each with a built-in bias resistor R1 (typ. 4.7 kW)· No mutual interference between the transistors· Simplification of circuit design· Reduces number of components and board space.Application· Especially suitable for space reduction in interface and...

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PUMD6 Picture
SeekIC No. : 004467157 Detail

PUMD6: Features: · Transistors with different polarity, each with a built-in bias resistor R1 (typ. 4.7 kW)· No mutual interference between the transistors· Simplification of circuit design· Reduces number...

floor Price/Ceiling Price

Part Number:
PUMD6
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Transistors with different polarity, each with a built-in bias resistor R1 (typ. 4.7 kW)
· No mutual interference between the transistors
· Simplification of circuit design
· Reduces number of components and board space.





Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of external resistors.





Pinout

  Connection Diagram




Specifications

Symbol
PARAMETER
CONDITIONS
MIN.
MAX.
Unit
VCBO
Collector-base voltage open emitter
-
50
V
VCEO
Collector-emitter voltage open base
-
50
V
VEBO
Emitter-base voltage open collector
-
10
V
VI
input voltage
positive
-
+40
V
negative
-
-10
V
IO
output current (DC)
-
100
mA
ICM
Peak collector current
-
100
mA
PTOT
total power dissipation TAMB 25 ;note 1
-
200
mW
TSTG
Storage Temperature
-65
+150
<





Description

NPN/PNP resistor-equipped transistors PUMD6 in an SC-88 (SOT363) plastic package.

The PUMD6 is designed as one kind of resistor-equipped transistors in an SC-88 (SOT363) plastic package. Its typical applications include especially suitable for space reduction in interface and driver circuits and inverter circuit configurations without use of external resistors.

PUMD6 has four features. (1)Transistors with different polarity, each with a built-in bias resistor R1 (typ 4.7kW). (2)No mutual interference between the transistors. (3)Simplification of circuit design. (4)Reduces number of components and board space. Those are all the main features.

Some absolute maximum ratings of PUMD6 have been concluded into several points as follow. (1)Its collector to base voltage would be 50V. (2)Its collector to emitter voltage would be 50V. (3)Its emitter to base voltage would be 10V. (4)Its input voltage would be +40V for positive and would be max -10V for negative. (5)Its output current DC would be 100mA. (6)Its peak collector current would be 100mA. (7)Its total power dissipation would be 200mW. (8)Its storage temperature range would be from -65°C to 150°C. (9)Its junction temperature would be 150°C. (10)Its operating ambient temperature range would be from -65°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of PUMD6 are concluded as follow. (1)Its collector cutoff current would be max 100nA with conditions of Ie=0 and Vcb=50V. (2)Its emitter cutoff current would be max 100nA. (3)Its DC current gain would be min 200. (4)Its collector to emitter saturation voltage would be max 100mV. (5)Its collector capacitance would be max 2.5pF. (6)Its input resistor would be typ 3.3kohms and typ 4.7kohms and max 6.1kohms. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!






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