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PUMD10

Features: · Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 kW and 47 kW respectively)· No mutual interference between the transistors· Simplification of circuit design· Reduces number of components and board space.Application· Especially suitable for space redu...

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SeekIC No. : 004467150 Detail

PUMD10: Features: · Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 kW and 47 kW respectively)· No mutual interference between the transistors· Simplification of circuit ...

PUMD10 Data Sheet

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Part Number:
PUMD10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Description



Features:

· Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 kW and 47 kW respectively)
· No mutual interference between the transistors
· Simplification of circuit design
· Reduces number of components and board space.


Application

· Especially suitable for space reduction in portable equipment
· Inverter circuit configurations without use of external resistors.


Specifications

Symbol
PARAMETER
 CONDITIONS
MIN.
MAX.
Unit
VCBO
 Collector-base voltage open emitter
-
50
V
VCEO
 Collector-emitter voltage open base
-
50
V
VEBO
 Emitter-base voltage open collector
-
10
V
VI
 input voltage        
positive  
-
+12
V
negative  
-
-5
V
IO
 output current (DC)  
-
100
mA
ICM
 Peak collector current  
-
100
mA
PTOT
 total power dissipation TAMB 25 ;note 1
-
200
mW
TSTG
 Storage Temperature  
-65
+150
TJ
 Junction temperature  
-
150
TAMB
 operating ambient temperature  
-65
+150



Description

NPN/PNP resistor-equipped transistors PUMD10 in an SC-88 (SOT363) plastic package.


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