PUMD10

Features: · Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 kW and 47 kW respectively)· No mutual interference between the transistors· Simplification of circuit design· Reduces number of components and board space.Application· Especially suitable for space redu...

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SeekIC No. : 004467150 Detail

PUMD10: Features: · Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 kW and 47 kW respectively)· No mutual interference between the transistors· Simplification of circuit ...

floor Price/Ceiling Price

Part Number:
PUMD10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 kW and 47 kW respectively)
· No mutual interference between the transistors
· Simplification of circuit design
· Reduces number of components and board space.



Application

· Especially suitable for space reduction in portable equipment
· Inverter circuit configurations without use of external resistors.



Specifications

Symbol
PARAMETER
CONDITIONS
MIN.
MAX.
Unit
VCBO
Collector-base voltage open emitter
-
50
V
VCEO
Collector-emitter voltage open base
-
50
V
VEBO
Emitter-base voltage open collector
-
10
V
VI
input voltage        
positive  
-
+12
V
negative  
-
-5
V
IO
output current (DC)  
-
100
mA
ICM
Peak collector current  
-
100
mA
PTOT
total power dissipation TAMB 25 ;note 1
-
200
mW
TSTG
Storage Temperature  
-65
+150
TJ
Junction temperature  
-
150
TAMB
operating ambient temperature  
-65
+150



Description

NPN/PNP resistor-equipped transistors PUMD10 in an SC-88 (SOT363) plastic package.


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