Features: · Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 kW and 47 kW respectively)· No mutual interference between the transistors· Simplification of circuit design· Reduces number of components and board space.Application· Especially suitable for space redu...
PUMD10: Features: · Transistors with different polarity and built-in bias resistors R1 and R2 (typ. 2.2 kW and 47 kW respectively)· No mutual interference between the transistors· Simplification of circuit ...
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Transistors Switching (Resistor Biased) TRNS DOUBL RET TAPE7
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Transistors Switching (Resistor Biased) Trans Digital BJT NPN/PNP 50V 6-Pin
Symbol |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
Unit |
VCBO |
Collector-base voltage | open emitter |
- |
50 |
V |
VCEO |
Collector-emitter voltage | open base |
- |
50 |
V |
VEBO |
Emitter-base voltage | open collector |
- |
10 |
V |
VI |
input voltage | ||||
positive |
- |
+12 |
V | ||
negative |
- |
-5 |
V | ||
IO |
output current (DC) |
- |
100 |
mA | |
ICM |
Peak collector current |
- |
100 |
mA | |
PTOT |
total power dissipation | TAMB 25 ;note 1 |
- |
200 |
mW |
TSTG |
Storage Temperature |
-65 |
+150 |
||
TJ |
Junction temperature |
- |
150 |
||
TAMB |
operating ambient temperature |
-65 |
+150 |