PU3216

The PU3216 is designed as silicon NPN epitaxial planar darlington type.

PU3216 has three features. The first one is it would have high DC current gain and good linearity. The next one is it would have high collector to emitter voltage. The next one is that it would have 3 NPN elements. That are all the main features.

Some absolute maximum ratings of PU3216 have been concluded into several points as follow. The first one is about its collector to base voltage which would be -200V. The next one is about its collector to emitter voltage which would be -150V. The next one is about its emitter to base voltage which would be -6V. The next one is about its peak collector current which would be -3A. The next one is about its collector current which would be -2A. The next one is about its power dissipation which would be 15W. The next one is about its junction temperature range which would be 150°C. The next one is about its storage temperature range which would be from -55 to +150°C.

Also there are some electrical characteristics of PU3216 having been concluded into several points as follow. The first one is about its collector cutoff current which would be max -50uA with condition of Vcb=-200V and Ie=0. The next one is about its emitter ctoff current which would be max -50uA with condition of Veb=-4V and Ic=0. The next one is about its collector to emitter voltage which would be min -150V with condition of Ic=-5mA and Ie=0. The next one is about its DC current gain which would be min 60 and max 240 with condition of Vce=-10V and Ic=-150mA. The next one is collector to emitter saturation voltage which would be max -1V. The next one is about its transition frequency which would be typ 40MHz with condition of Vce=-10V, Ic=-0.5A and f=10MHz. And so on. For more information please contact us.