PU3212

The PU3212 is designed as silicon NPN epitaxial planar type.

PU3212 has four features. The first one is it would have low collector to emitter saturation voltage. The next one is that it would have high collector current. The next one is it would have good linearity of DC current gain. The next one is it would have 3 NPN elements. That are all the main features.

Some absolute maximum ratings of PU3212 have been concluded into several points as follow. The first one is about its collector to base voltage which would be -130V. The next one is about its collector to emitter voltage which would be -80V. The next one is about its emitter to base voltage which would be -7V. The next one is about its peak collector current which would be -6A. The next one is about its collector current which would be -3A. The next one is about its power dissipation which would be 15W. The next one is about its junction temperature range which would be 150°C. The next one is about its storage temperature range which would be from -55 to +150°C.

Also there are some electrical characteristics of PU3212 having been concluded into several points as follow. The first one is about its collector cutoff current which would be max -10uA with condition of Vcb=-100V and Ie=0. The next one is about its emitter cutoff current which would be max -50uA with condition of Veb=-5V and Ic=0. The next one is about its collector to emitter voltage which would be min -80V with condition of Ic=-10mA and Ib=0. The next one is about its DC current gain which would be min 60 and max 260 with condition of Vce=-2V and Ic=-0.5A. The next one is collector to emitter saturation voltage which would be max -0.5V. The next one is about its transition frequency which would be typ 30MHz with condition of Vce=-10V, Ic=-0.5A and f=10MHz. And so on. For more information please contact us.