PTF191601 Selling Leads, Price trend, PTF191601 DataSheet download, circuit diagram from SeekIC.com

Features: • Broadband internal matching• Typical EDGE performance - Average output power = 62 W - Gain = 14 dB - Efficiency = 32% - EVM = 1.7%• Typical CW performance- Output power at P1dB = 180 W - Gain = 13 dB - Efficiency = 47%• Integrated ESD protection: Human Body Mode...

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SeekIC No. : 004466897 Detail

PTF191601: Features: • Broadband internal matching• Typical EDGE performance - Average output power = 62 W - Gain = 14 dB - Efficiency = 32% - EVM = 1.7%• Typical CW performance- Output power...

PTF191601 Data Sheet

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Part Number:: PTF191601
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

• Broadband internal matching
• Typical EDGE performance
- Average output power = 62 W
- Gain = 14 dB
- Efficiency = 32%
- EVM = 1.7%
• Typical CW performance
- Output power at P1dB = 180 W
- Gain = 13 dB
- Efficiency = 47%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
160 W (CW) output power

Specifications

Parameter	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	65	V_dc
Gate-Source Voltage	V_GS	0.5 to +12	V_dc
Operating Junction Temperature	T_J	200	°C
Total Device Dissipation Above 25°C derate by	P_D	583 3.33	Watts W/°C
Storage Temperature Range	T_STG	40 to +150	°C
Thermal Resistance (T_CASE = 70°C, 130 W CW)	R_qJC	0.30	°C/W

Description

The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

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PTF191601

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