RF Amplifier RF LDMOS Transistor
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Parameter | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | 65 | Vdc |
Gate-Source Voltage | VGS | ±20 | Vdc |
Operating Junction Temperature | TJ | 200 | °C |
Total Device Dissipation PD 58 Watts Above 25°C derate by |
PD | 58 0.33 |
Watts W/°C |
Storage Temperature | TSTG | 150 | °C |
Thermal Resistance (TCASE = 70°C) | RJC | 3.0 | °C/W |
The PTF 10041 is a 12watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.