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PTF181301

Features: • Broadband internal matching• Typical EDGE performance - Average output power = 55 W - Gain = 15.5 dB - Efficiency = 32% - EVM = 1.7%• Typical CW performance - Output power at P1dB = 150 W - Gain = 14.5 dB - Efficiency = 47%• Integrated ESD protection: Human Body...

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SeekIC No. : 004466896 Detail

PTF181301: Features: • Broadband internal matching• Typical EDGE performance - Average output power = 55 W - Gain = 15.5 dB - Efficiency = 32% - EVM = 1.7%• Typical CW performance - Output po...

PTF181301 Data Sheet

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Part Number:
PTF181301
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Broadband internal matching
• Typical EDGE performance
  - Average output power = 55 W
  - Gain = 15.5 dB
  - Efficiency = 32%
  - EVM = 1.7%
• Typical CW performance
  - Output power at P1dB = 150 W
  - Gain = 14.5 dB
  - Efficiency = 47%
• Integrated ESD protection: Human Body
   Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
  130 W (CW) output power


Specifications

The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability.




Description

The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability.




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