Features: • Broadband internal matching• Typical two-tone performance - Average output power = 30 W - Gain = 16.5 dB - Efficiency = 35%• Typical CW performance - Output power at P1dB = 75 W - Gain = 15.5 dB - Efficiency = 47%• Integrated ESD protection: Human Body Model, Cl...
PTF180601: Features: • Broadband internal matching• Typical two-tone performance - Average output power = 30 W - Gain = 16.5 dB - Efficiency = 35%• Typical CW performance - Output power at P1...
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Parameter | Symbol | Value | Unit | |
Drain-Source Voltage | VDSS | 65 | Vdc | |
Gate-Source Voltage | VGS | 0.5 to +12 | Vdc | |
Operating Junction Temperature | TJ | 200 | °C | |
Total Device Dissipation Above 25°C derate by |
PTF180601C | PD | 159 0.91 |
Watts W/°C |
Total Device Dissipation Above 25°C derate by |
PTF080601E | PD | 180 1.03 |
Watts W/°C |
Storage Temperature Range | TSTG | 40 to +150 | °C | |
Thermal Resistance (TCASE = 70°C, 130 W CW) | PTF180601C PTF080601E |
RqJC RqJC |
1.1 0.97 |
°C/W °C/W |
The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.