PTF180101 Selling Leads, Price trend, PTF180101 DataSheet download, circuit diagram from SeekIC.com

Features: • Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 %• Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR = 45 dBc• Typical CW performance - Output power at P1dB = 15 ...

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SeekIC No. : 004466894 Detail

PTF180101: Features: • Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 %• Typical WCDMA performance - Average output power = 1.8 W - Gain = 1...

PTF180101 Data Sheet

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Part Number:: PTF180101
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

• Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
• Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = 45 dBc
• Typical CW performance
- Output power at P1dB = 15 W
- Efficiency = 50%
• Integrated ESD protection:
Human Body Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power

Specifications

Parameter	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	65	V_dc
Gate-Source Voltage	V_GS	0.5 to +12	V_dc
Operating Junction Temperature	T_J	200	°C
Total Device Dissipation Above 25°C derate by	P_D	58 0.333	Watts W/°C
Storage Temperature Range	T_STG	-40 to 150	°C
Thermal Resistance (T_CASE = 70°C,10 W CW)	R_qJC	3.0	°C/W

Description

The PTF180101 is a 10 W, internallymatched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.

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PTF180101

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