RF Amplifier RF LDMOS Transistor
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Parameter | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | 65 | Vdc |
Gate-Source Voltage | VGS | ±20 | Vdc |
Operating Junction Temperature | TJ | 200 | °C |
Total Device Dissipation PD 58 Watts Above 25°C derate by |
PD | 46 0.26 |
Watts W/°C |
Storage Temperature | TSTG | 40 to +150 | °C |
Thermal Resistance (TCASE = 70°C) | RJC | 3.8 | °C/W |
The PTF 10147 is a 10watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.