Features: 26 Volt, 1.845 GHz Characteristics - Output Power = 10 Watts - Gain = 9.4 dB Typ at 5 Watts Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications Parameter Symbol Rating Unit Collector-emit...
PTB 20264: Features: 26 Volt, 1.845 GHz Characteristics - Output Power = 10 Watts - Gain = 9.4 dB Typ at 5 Watts Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Availab...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
50 |
Vdc |
Collector-Base Voltage |
VCBO |
50 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
2.0 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
30 0.173 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
5.8 |
°C/W |
The PTB 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts minimum output power, PTB 20264 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.