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PTB 20258

Features: 6 Watts, 915960 MHz Class AB Characteristics 50% Typ Collector Efficiency at 6 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage...

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PTB 20258: Features: 6 Watts, 915960 MHz Class AB Characteristics 50% Typ Collector Efficiency at 6 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride ...

PTB 20258 Data Sheet

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Part Number:
PTB 20258
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

6 Watts, 915960 MHz
Class AB Characteristics
50% Typ Collector Efficiency at 6 Watts
Tested to solderability standards:
    - IEC-68-2-54
    - ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

55

 Vdc

Collector-Base Voltage

 VCBO

60

Vdc

 Emitter-Base Voltage (collector open)

VEBO

 4.0

Vdc

Collector Current (continuous)

 IC

1.7

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

22

0.125

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 8

°C/W




Description

The PTB 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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