Features: 2.5 Watts, 26 Vdc Class AB Characteristics Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 55 Vdc Collector-Base Voltage VCBO 55...
PTB 20249: Features: 2.5 Watts, 26 Vdc Class AB Characteristics Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating ...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
55 |
Vdc |
Collector-Base Voltage |
VCBO |
55 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
0.5 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
10 0.057 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
17.5 |
°C/W |
The PTB 20249 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 2.5 watts minimum output power, PTB 20249 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.