Features: 0.7 Watts, 26 Vdc Class A Characteristics Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 ...
PTB 20248: Features: 0.7 Watts, 26 Vdc Class A Characteristics Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating ...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
50 |
Vdc |
Collector-Base Voltage |
VCBO |
50 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
0.5 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
5.4 0.031 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
32.3 |
°C/W |
The 20248 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 0.7 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.