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PTB 20245

Features: • 35 Watts, 2.12.2 GHz• Class AB Characteristics• Gold Metallization• Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 55 Vdc Collector-Base Voltage VCBO 55 Vdc ...

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PTB 20245: Features: • 35 Watts, 2.12.2 GHz• Class AB Characteristics• Gold Metallization• Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit C...

PTB 20245 Data Sheet

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Part Number:
PTB 20245
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 35 Watts, 2.12.2 GHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

55

 Vdc

Collector-Base Voltage

 VCBO

55

Vdc

 Emitter-Base Voltage (collector open)

VEBO

3.5

Vdc

Collector Current (continuous)

 IC

7.7

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

200

1.2

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

0.85

°C/W




Description

The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in Wide CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.




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