Features: 470860 MHz, 28 Volts Class AB Characteristics 50% Collector Efficiency at 150 WattsGold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 55 Vdc Collector-Base Voltage VCBO 60 V...
PTB 20237: Features: 470860 MHz, 28 Volts Class AB Characteristics 50% Collector Efficiency at 150 WattsGold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Uni...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
55 |
Vdc |
Collector-Base Voltage |
VCBO |
60 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
25 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
330 1.89 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
0.53 |
°C/W |
The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.