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PTB 20235

Features: 70 Watts, 2.12.2 GHz Class AB Characteristics Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 55 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage (collect...

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PTB 20235: Features: 70 Watts, 2.12.2 GHz Class AB Characteristics Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage V...

PTB 20235 Data Sheet

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Part Number:
PTB 20235
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

70 Watts, 2.12.2 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

55

 Vdc

Collector-Base Voltage

 VCBO

65

Vdc

 Emitter-Base Voltage (collector open)

VEBO

 3.5

Vdc

Collector Current (continuous)

 IC

12

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

320

1.83

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 0.547

°C/W




Description

The PTB 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, PTB 20235 is specifically intended for operation as a final stage in Wide CDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.




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