Features: 45 Watts, 1.82.0 GHz Class AB Characteristics 45% Collector Efficiency at 45 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 55 Vdc Collector-Base Voltage VCBO 55 Vdc...
PTB 20230: Features: 45 Watts, 1.82.0 GHz Class AB Characteristics 45% Collector Efficiency at 45 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit ...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
55 |
Vdc |
Collector-Base Voltage |
VCBO |
55 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
7.7 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
200 1.2 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
0.85 |
°C/W |
The PTB 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, PTB 20230 is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.