Features: 6.5 Watts, 1.621.66 GHz Class AB Characteristics 40% Collector Efficiency at 6.5 WattsSurface Mountable Available in Tape and Reel Gold MetallizationSilicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 55 Vdc ...
PTB 20228: Features: 6.5 Watts, 1.621.66 GHz Class AB Characteristics 40% Collector Efficiency at 6.5 WattsSurface Mountable Available in Tape and Reel Gold MetallizationSilicon Nitride PassivatedSpecification...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
55 |
Vdc |
Collector-Base Voltage |
VCBO |
50 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
1.0 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
19.7 0.112 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
8.9 |
°C/W |
The PTB 20228 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.626 to 1.661 GHz. Rated at 6 watts minimum output power, PTB 20228 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.