Features: 15 Watts, 915960 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Surface Mountable Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 65 Vdc Collector-Base Voltage ...
PTB 20220: Features: 15 Watts, 915960 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Surface Mountable Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbo...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
65 |
Vdc |
Collector-Base Voltage |
VCBO |
65 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
4.0 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
37 0.21 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
4.7 |
°C/W |
The PTB 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications, PTB 20220 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.