Features: • 70 Watts, 925960 MHz• Class AB Characteristics• Guaranteed Performance at 26 Volts, 960 MHz - Output Power = 70 Watts - Collector Efficiency = 50% min. at 70 Watts - IMD = -30 max. at 50 W(PEP)• Gold Metallization• Silicon Nitride PassivatedSpecifications ...
PTB 20219: Features: • 70 Watts, 925960 MHz• Class AB Characteristics• Guaranteed Performance at 26 Volts, 960 MHz - Output Power = 70 Watts - Collector Efficiency = 50% min. at 70 Watts - IM...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
40 |
Vdc |
Collector-Base Voltage |
VCBO |
65 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
20 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
159 0.95 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
1.1 |
°C/W |
The PTB 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. PTB 20219 is rated at 70 watts minimum output power for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.