PTB 20219

Features: • 70 Watts, 925960 MHz• Class AB Characteristics• Guaranteed Performance at 26 Volts, 960 MHz - Output Power = 70 Watts - Collector Efficiency = 50% min. at 70 Watts - IMD = -30 max. at 50 W(PEP)• Gold Metallization• Silicon Nitride PassivatedSpecifications ...

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PTB 20219 Picture
SeekIC No. : 004466755 Detail

PTB 20219: Features: • 70 Watts, 925960 MHz• Class AB Characteristics• Guaranteed Performance at 26 Volts, 960 MHz - Output Power = 70 Watts - Collector Efficiency = 50% min. at 70 Watts - IM...

floor Price/Ceiling Price

Part Number:
PTB 20219
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 70 Watts, 925960 MHz
• Class AB Characteristics
• Guaranteed Performance at 26 Volts, 960 MHz
   - Output Power = 70 Watts
   - Collector Efficiency = 50% min. at 70 Watts
   - IMD = -30 max. at 50 W(PEP)
• Gold Metallization
• Silicon Nitride Passivated



Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

65

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

20

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

159

0.95

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 1.1

°C/W




Description

The PTB 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. PTB 20219 is rated at 70 watts minimum output power for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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