Features: 6 Watts, 1.802.00 GHz Class AB Characteristics 30% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc ...
PTB 20216: Features: 6 Watts, 1.802.00 GHz Class AB Characteristics 30% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications ...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
50 |
Vdc |
Collector-Base Voltage |
VCBO |
50 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
1.0 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
19.7 0.112 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
8.9 |
°C/W |
The PTB 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, PTB 20216 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.