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PTB 20206

Features: Class A Characteristics 1.0 Watt, 470860 MHz -44 dBc Max Two-tone IMD at 1 W(PEP) Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vd...

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PTB 20206: Features: Class A Characteristics 1.0 Watt, 470860 MHz -44 dBc Max Two-tone IMD at 1 W(PEP) Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit...

PTB 20206 Data Sheet

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Part Number:
PTB 20206
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Class A Characteristics
  1.0 Watt, 470860 MHz
  -44 dBc Max Two-tone IMD at 1 W(PEP)
  Gold Metallization
  Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

1.7

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

13.5

0.077

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

13.0

°C/W




Description

The PTB 20206 is an NPN common emitter RF power transistor intended for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt minimum output power, PTB 20206 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.




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