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PTB 20204

Features: 1.0 Watt, 380500 MHz Class A Characteristics -40 dB Max Two-Tone IMD at 1.0 W(PEP) Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 60 Vdc Collector-Base Vol...

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PTB 20204: Features: 1.0 Watt, 380500 MHz Class A Characteristics -40 dB Max Two-Tone IMD at 1.0 W(PEP) Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rati...

PTB 20204 Data Sheet

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Part Number:
PTB 20204
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

1.0 Watt, 380500 MHz
Class A Characteristics
-40 dB Max Two-Tone IMD at 1.0 W(PEP)
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

60

 Vdc

Collector-Base Voltage

 VCBO

60

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

0.5

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

11

0.0625

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

16

°C/W




Description

The PTB 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, PTB 20204 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.




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