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PTB 20195

Features: Class AB Characteristics 26 Volt, 900 MHz Characteristics - Output Power = 150 Watts Min - Collector Efficiency = 50% Min at 150 Watts - Gain = 9 dB Typ Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter volta...

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PTB 20195: Features: Class AB Characteristics 26 Volt, 900 MHz Characteristics - Output Power = 150 Watts Min - Collector Efficiency = 50% Min at 150 Watts - Gain = 9 dB Typ Gold Metallization Silicon Nitride ...

PTB 20195 Data Sheet

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Part Number:
PTB 20195
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Class AB Characteristics
  26 Volt, 900 MHz Characteristics
     - Output Power = 150 Watts Min
     - Collector Efficiency = 50% Min at 150 Watts
      - Gain = 9 dB Typ
  Gold Metallization
  Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

60

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

25

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

330

1.89

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

0.53

°C/W




Description

The PTB 20195 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150 watts minimum output power, PTB 20195 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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