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PTB 20190

Features: 175 Watts, 470806 MHz Class AB Characteristics 50% Collector Efficiency at 175 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 60 ...

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PTB 20190: Features: 175 Watts, 470806 MHz Class AB Characteristics 50% Collector Efficiency at 175 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating U...

PTB 20190 Data Sheet

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Part Number:
PTB 20190
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

175 Watts, 470806 MHz
Class AB Characteristics
50% Collector Efficiency at 175 Watts
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

60

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

25

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

330

1.89

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

0.53

°C/W




Description

The PTB 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, PTB 20190  is specifically intended to operate uncorrected at 125 watts P-Sync (tested to EIA Standard 4.1.3, Section 5, Method B for class AB transmitters at 125 watts P-sync) or at a minimum of 175 watts in PEP applications. It may also be operated at comparable power levels for ATV broadcasting. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.




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