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PTB 20189

Features: 25 Volt, 900960 MHz Characteristics - Output Power = 1 Watt- Gain = 12 dB Min at 1 Watt Class A/AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications Parameter Symbol Rating Unit Collector-emitte...

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PTB 20189: Features: 25 Volt, 900960 MHz Characteristics - Output Power = 1 Watt- Gain = 12 dB Min at 1 Watt Class A/AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available...

PTB 20189 Data Sheet

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Part Number:
PTB 20189
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

25 Volt, 900960 MHz Characteristics
  - Output Power = 1 Watt
  - Gain = 12 dB Min at 1 Watt
Class A/AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

0.5

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

11

0.063

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

16.0

°C/W




Description

The PTB 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, PTB 20189 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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