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PTB 20180

Features: 2.5 Watts, 1.82.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collector-Base Voltage VCBO ...

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PTB 20180: Features: 2.5 Watts, 1.82.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications Parameter Symbol Rati...

PTB 20180 Data Sheet

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Part Number:
PTB 20180
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

2.5 Watts, 1.82.0 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

50

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

1.0

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

10

0.057

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

17.5

°C/W




Description

The PTB 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, PTB 20180 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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