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PTB 20179

Features: 0.4 Watt, 1.82.0 GHz Class A Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collector-Base Voltage VCBO ...

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SeekIC No. : 004466743 Detail

PTB 20179: Features: 0.4 Watt, 1.82.0 GHz Class A Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications Parameter Symbol Rating...

PTB 20179 Data Sheet

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Part Number:
PTB 20179
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

0.4 Watt, 1.82.0 GHz
Class A Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

50

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

0.5

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

5.4

0.031

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

32.3

°C/W




Description

The PTB 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, PTB 20179  may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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