PTB 20177 Selling Leads, Price trend, PTB 20177 DataSheet download, circuit diagram from SeekIC.com

Features: 26 Volt, 960 MHz Characteristics- Output Power = 150 Watts (PEP) - Collector Efficiency = 50 Min at 150 Watts - IMD = -28 dBc Max at 150 Watts (PEP) Class AB Characteristics Gold MetallizationSilicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Col...

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SeekIC No. : 004466742 Detail

PTB 20177: Features: 26 Volt, 960 MHz Characteristics- Output Power = 150 Watts (PEP) - Collector Efficiency = 50 Min at 150 Watts - IMD = -28 dBc Max at 150 Watts (PEP) Class AB Characteristics Gold Metalliza...

PTB 20177 Data Sheet

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Part Number:: PTB 20177
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

26 Volt, 960 MHz Characteristics
   - Output Power = 150 Watts (PEP)
   - Collector Efficiency = 50 Min at 150 Watts
   - IMD = -28 dBc Max at 150 Watts (PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated

Specifications

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	V_CER	40	V_dc
Collector-Base Voltage	V_CBO	60	V_dc
Emitter-Base Voltage (collector open)	V_EBO	4.0	V_dc
Collector Current (continuous)	I_C	25	A_dc
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by	P_D	330 1.89	Watts W/°C
Storage Temperature Range	T_stg	40 to +150	°C
Thermal Resistance (Tflange = 70° C)	R_qJC	0.53	°C/W

Description

The PTB 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, PTB 20177 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

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