Features: 26 Volt, 1.85 GHz Characteristics Class A/AB Internally Matched Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 20 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base ...
PTB 20176: Features: 26 Volt, 1.85 GHz Characteristics Class A/AB Internally Matched Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emit...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
20 |
Vdc |
Collector-Base Voltage |
VCBO |
45 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
1 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
21 0.12 |
Watts W/°C |
Storage Temperature Range |
Tstg |
150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
8.5 |
°C/W |
The PTB 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, PTB 20176 is specifically designed for class A or AB linear power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.