PTB 20176

Features: 26 Volt, 1.85 GHz Characteristics Class A/AB Internally Matched Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 20 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base ...

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SeekIC No. : 004466741 Detail

PTB 20176: Features: 26 Volt, 1.85 GHz Characteristics Class A/AB Internally Matched Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emit...

floor Price/Ceiling Price

Part Number:
PTB 20176
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

 26 Volt, 1.85 GHz Characteristics
  Class A/AB
  Internally Matched
  Gold Metallization
  Silicon Nitride Passivated



Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

 20

 Vdc

Collector-Base Voltage

 VCBO

45

Vdc

 Emitter-Base Voltage (collector open)

VEBO

 4.0

Vdc

Collector Current (continuous)

 IC

1

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

21

0.12

Watts

W/°C

 Storage Temperature Range

 Tstg

150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 8.5

°C/W




Description

The PTB 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, PTB 20176 is specifically designed for class A or AB linear power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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