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PTB 20175

Features: 55 Watts, 1.92.0 GHz Class AB Characteristics 40% Collector Efficiency at 55 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 55 Vdc Collector-Base Voltag...

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PTB 20175: Features: 55 Watts, 1.92.0 GHz Class AB Characteristics 40% Collector Efficiency at 55 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating ...

PTB 20175 Data Sheet

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Part Number:
PTB 20175
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

55 Watts, 1.92.0 GHz
Class AB Characteristics
40% Collector Efficiency at 55 Watts
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

55

 Vdc

Collector-Base Voltage

 VCBO

55

Vdc

 Emitter-Base Voltage (collector open)

VEBO

 4

Vdc

Collector Current (continuous)

 IC

8

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

233

1.33

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 0.75

°C/W




Description

The PTB 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. PTB 20175 is rated at 55 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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