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Features: Class AB Characteristics Specified 26 Volts, 1490 MHz - Output Power = 90 Watts - IMD at 90 Watts = -28 dBc max. - Gain at 90 Watts = 7.5 dB min. Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage ...

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SeekIC No. : 004466739 Detail

PTB 20174: Features: Class AB Characteristics Specified 26 Volts, 1490 MHz - Output Power = 90 Watts - IMD at 90 Watts = -28 dBc max. - Gain at 90 Watts = 7.5 dB min. Gold Metallization Silicon Nitride Passiv...

PTB 20174 Data Sheet

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Part Number:: PTB 20174
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

Class AB Characteristics
Specified 26 Volts, 1490 MHz
- Output Power = 90 Watts
- IMD at 90 Watts = -28 dBc max.
- Gain at 90 Watts = 7.5 dB min.
Gold Metallization
Silicon Nitride Passivated

Specifications

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	V_CER	52	V_dc
Collector-Base Voltage	V_CBO	50	V_dc
Emitter-Base Voltage (collector open)	V_EBO	4.0	V_dc
Collector Current (continuous)	I_C	15	A_dc
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by	P_D	290 1.67	Watts W/°C
Storage Temperature	T_stg	150	°C
Thermal Resistance (Tflange = 70° C)	R_qJC	0.6	°C/W

Description

The PTB 20174 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minimum output power, PTB 20174 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

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