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PTB 20170

Features: 30 Watts, 1.82.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 55 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage (collect...

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PTB 20170: Features: 30 Watts, 1.82.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage V...

PTB 20170 Data Sheet

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Part Number:
PTB 20170
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

30 Watts, 1.82.0 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

55

 Vdc

Collector-Base Voltage

 VCBO

55

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

6.7

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

123

0.7

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

1.43

°C/W




Description

The PTB 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, PTB 20170 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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