Position: Home  > All Categories> Integrated Circuits (ICs) > PTB 20167

PTB 20167

Features: 24 Volt, 905 MHz Common Base Characteristics - Output Power = 60 W - Power Gain = 7.0 dB Min - Efficiency = 60% Min Double Input/Output Matched for Wideband Performance Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector...

product image

PTB 20167 Picture
See larger image
SeekIC No. : 004466736 Detail

PTB 20167: Features: 24 Volt, 905 MHz Common Base Characteristics - Output Power = 60 W - Power Gain = 7.0 dB Min - Efficiency = 60% Min Double Input/Output Matched for Wideband Performance Gold Metallization ...

PTB 20167 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PTB 20167
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 24 Volt, 905 MHz Common Base Characteristics
    - Output Power = 60 W
    - Power Gain = 7.0 dB Min
    - Efficiency = 60% Min
Double Input/Output Matched for Wideband
    Performance
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

30

 Vdc

Collector-Base Voltage

 VCBO

55

Vdc

 Emitter-Base Voltage (collector open)

VEBO

 4.0

Vdc

Collector Current (continuous)

 IC

10

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

175

1

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 1

°C/W




Description

The PTB 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, PTB 20167 is specifically designed for class C power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optical Inspection Equipment
AA924
A21K4B
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Integrated Circuits (ICs)
TA8435H
1MB12-140
Crystals and Oscillators
WT325BI0030.000000
2SB49
Optoelectronics
SFH7770
TLP423J
View more