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PTB 20166

Features: Specified at 28 Volt, 925 MHz Class C Characteristics 55% Min Collector Efficiency at 23 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collec...

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SeekIC No. : 004466735 Detail

PTB 20166: Features: Specified at 28 Volt, 925 MHz Class C Characteristics 55% Min Collector Efficiency at 23 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symb...

PTB 20166 Data Sheet

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Part Number:
PTB 20166
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

 Specified at 28 Volt, 925 MHz
Class C Characteristics
55% Min Collector Efficiency at 23 Watts
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

50

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

4

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

48

0.27

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

3.6

°C/W




Description

The PTB 20166 is an NPN, common base RF power transistor intended for 2430 Vdc class C operation from 675 to 925 MHz. Rated at 23 watts minimum output power, PTB 20166 may be used for both CW and pulsed applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.


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