PTB 20162 Selling Leads, Price trend, PTB 20162 DataSheet download, circuit diagram from SeekIC.com

Features: 40 Watts, 470900 MHz Class AB Characteristics 50% Min Collector Efficiency at 40 WattsGold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 ...

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PTB 20162: Features: 40 Watts, 470900 MHz Class AB Characteristics 50% Min Collector Efficiency at 40 WattsGold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating ...

PTB 20162 Data Sheet

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Part Number:: PTB 20162
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

40 Watts, 470900 MHz
Class AB Characteristics
50% Min Collector Efficiency at 40 Watts
Gold Metallization
Silicon Nitride Passivated

Specifications

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	V_CER	50	V_dc
Collector-Base Voltage	V_CBO	50	V_dc
Emitter-Base Voltage (collector open)	V_EBO	4.0	V_dc
Collector Current (continuous)	I_C	10.0	A_dc
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by	P_D	80 0.45	Watts W/°C
Storage Temperature Range	T_stg	40 to +150	°C
Thermal Resistance (Tflange = 70° C)	R_qJC	2.2	°C/W

Description

The PTB 20162 is an NPN common emitter RF power transistor intended for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40 watts minimum output power, PTB 20162 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

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