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PTB 20157

Features: 20 Watts, 1.351.85 GHz Class C Characteristics 40% Min Collector Efficiency at 20 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collector-Base Voltage VCBO 50...

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PTB 20157: Features: 20 Watts, 1.351.85 GHz Class C Characteristics 40% Min Collector Efficiency at 20 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating ...

PTB 20157 Data Sheet

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Part Number:
PTB 20157
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

20 Watts, 1.351.85 GHz
Class C Characteristics
40% Min Collector Efficiency at 20 Watts
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

50

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

6

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

75

0.43

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

2.33

°C/W




Description

The PTB 20157 is an NPN common base RF power transistor intended for 2226 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, PTB 20157 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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