PTB 20156 Selling Leads, Price trend, PTB 20156 DataSheet download, circuit diagram from SeekIC.com

Features: Specified 22 Volts Class C Characteristics Output Power: 8 Watts Gain: 6.0 dB Min. at 8 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (colle...

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SeekIC No. : 004466732 Detail

PTB 20156: Features: Specified 22 Volts Class C Characteristics Output Power: 8 Watts Gain: 6.0 dB Min. at 8 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol ...

PTB 20156 Data Sheet

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Part Number:: PTB 20156
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/11/25

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Recent History
What is this?

PTB 20003 evaluate
Features: Specified 25 Volts4 Watts, 915960 MHz Class AB Characteristics 50% Collector Efficiency ...
PTB 20004 evaluate
Features: 50 Watts, 860900 MHz Class AB Characteristics 50% Collector Efficiency at 50 Watts Gold ...
PTB 20005 evaluate
Features: 15 Watts, 860900 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Gold ...

Product Details

Description

Features:

Specified 22 Volts
Class C Characteristics
Output Power: 8 Watts
Gain: 6.0 dB Min. at 8 Watts
Gold Metallization
Silicon Nitride Passivated

Specifications

Parameter	Symbol	Rating	Unit
Collector-Base Voltage	V_CBO	50	V_dc
Emitter-Base Voltage (collector open)	V_EBO	4.0	V_dc
Collector Current (continuous)	I_C	2.0	A_dc
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by	P_D	52 0.29	Watts W/°C
Storage Temperature Range	T_stg	40 to +150	°C
Thermal Resistance (Tflange = 70° C)	R_qJC	3.4	°C/W

Description

The PTB 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, PTB 20156 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

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PTB 20156

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