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PTB 20155

Features: 9 Watts, 610960 MHz Class C Characteristics Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector...

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PTB 20155: Features: 9 Watts, 610960 MHz Class C Characteristics Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCE...

PTB 20155 Data Sheet

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Part Number:
PTB 20155
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

9 Watts, 610960 MHz
Class C Characteristics
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

6.7

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

65

0.37

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 2.7

°C/W




Description

The PTB 20155 is an NPN common base RF power transistor intended for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts minimum output power, PTB 20155 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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