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PTB 20148

Features: 60 Watts, 925960 MHz Class AB Characteristics 50% Min Collector Efficiency at 60 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 65 ...

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PTB 20148: Features: 60 Watts, 925960 MHz Class AB Characteristics 50% Min Collector Efficiency at 60 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating ...

PTB 20148 Data Sheet

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Part Number:
PTB 20148
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

 60 Watts, 925960 MHz
Class AB Characteristics
50% Min Collector Efficiency at 60 Watts
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

65

Vdc

 Emitter-Base Voltage (collector open)

VEBO

 4.0

Vdc

Collector Current (continuous)

 IC

8.0

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

145

0.83

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 1.2

°C/W




Description

The PTB 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, PTB 20148 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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