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PTB 20145

Features: 9 Watts, 915960 MHz Class AB Characteristics 50% Min Collector Efficiency at 9 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications Parameter Symbol ...

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SeekIC No. : 004466726 Detail

PTB 20145: Features: 9 Watts, 915960 MHz Class AB Characteristics 50% Min Collector Efficiency at 9 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride ...

PTB 20145 Data Sheet

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Part Number:
PTB 20145
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

 9 Watts, 915960 MHz
Class AB Characteristics
50% Min Collector Efficiency at 9 Watts
Tested to solderability standards:
    - IEC-68-2-54
    - ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

55

 Vdc

Collector-Base Voltage

 VCBO

60

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

2.6

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

33

0.19

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 5.3

°C/W




Description

The PTB 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, PTB 20145 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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