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PTB 20141

Features: 18 Watts, 1.4651.513 GHzClass AB Characteristics 45% Min Collector Efficiency at 9 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 6...

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SeekIC No. : 004466724 Detail

PTB 20141: Features: 18 Watts, 1.4651.513 GHzClass AB Characteristics 45% Min Collector Efficiency at 9 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating ...

PTB 20141 Data Sheet

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Part Number:
PTB 20141
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

18 Watts, 1.4651.513 GHz
Class AB Characteristics
45% Min Collector Efficiency at 9 Watts
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

60

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

2.0

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

51.5

0.29

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

3.5

°C/W




Description

The PTB 20141 is a class AB, NPN, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, PTB 20141  may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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