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PTB 20125

Features: 100 Watts, 1.82.0 GHz Class AB Characteristics 40% Collector Efficiency at 100 Watts Gold MetallizationSilicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 55 Vdc Collector-Base Voltage VCBO 55 ...

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SeekIC No. : 004466722 Detail

PTB 20125: Features: 100 Watts, 1.82.0 GHz Class AB Characteristics 40% Collector Efficiency at 100 Watts Gold MetallizationSilicon Nitride PassivatedSpecifications Parameter Symbol Rating Un...

PTB 20125 Data Sheet

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Part Number:
PTB 20125
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

100 Watts, 1.82.0 GHz
Class AB Characteristics
40% Collector Efficiency at 100 Watts
Gold Metallization
 Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

55

 Vdc

Collector-Base Voltage

 VCBO

55

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

14

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

400

2.3

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

0.44

°C/W




Description

The PTB 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, PTB 20125  is specifically intended for operation as a final stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.




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