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PTB 20105

Features: Class AB Characteristics Performance at 960 MHz, 25 VCC - Output Power = 20 W - Efficiency = 50% Min Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage ...

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PTB 20105: Features: Class AB Characteristics Performance at 960 MHz, 25 VCC - Output Power = 20 W - Efficiency = 50% Min Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbo...

PTB 20105 Data Sheet

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Part Number:
PTB 20105
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Class AB Characteristics
Performance at 960 MHz, 25 VCC
    - Output Power = 20 W
    - Efficiency = 50% Min
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

5.0

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

70

0.4

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

2.5

°C/W




Description

The PTB 20105 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20 watts minimum output power, PTB 20105 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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