Features: 28 Volt, 860 MHz Characteristics - Output Power = 175 Watts P-Sync - Output Power = 110 (CW) - Gain = 10.0 dB Min 55% Collector Efficiency at 110 Watts Class AB Characteristics Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit ...
PTB 20101: Features: 28 Volt, 860 MHz Characteristics - Output Power = 175 Watts P-Sync - Output Power = 110 (CW) - Gain = 10.0 dB Min 55% Collector Efficiency at 110 Watts Class AB Characteristics Gold Metall...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
40 |
Vdc |
Collector-Base Voltage |
VCBO |
60 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
25 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
330 1.89 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
0.53 |
°C/W |
The PTB 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. PTB 20101 is rated at 175 watts P-sync minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.