PTB 20097

Features: 40 Watts, 915960 MHzClass AB Characteristics 50% Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vd...

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SeekIC No. : 004466718 Detail

PTB 20097: Features: 40 Watts, 915960 MHzClass AB Characteristics 50% Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit...

floor Price/Ceiling Price

Part Number:
PTB 20097
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

 40 Watts, 915960 MHz
Class AB Characteristics
50% Collector Efficiency at 40 Watts
Gold Metallization
Silicon Nitride Passivated



Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

10.0

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

175

1.0

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

1.0

°C/W




Description

The PTB 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, PTB 20097 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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