Features: 40 Watts, 915960 MHzClass AB Characteristics 50% Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vd...
PTB 20097: Features: 40 Watts, 915960 MHzClass AB Characteristics 50% Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
40 |
Vdc |
Collector-Base Voltage |
VCBO |
50 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
10.0 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
175 1.0 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
1.0 |
°C/W |
The PTB 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, PTB 20097 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.