PTB 20095 Selling Leads, Price trend, PTB 20095 DataSheet download, circuit diagram from SeekIC.com

Features: 15 Watts, 915960 MHz Class AB Characteristics Specified 25 Volts, 960 MHz Characteristics - Output Power = 15 Watts - Collector Efficiency = 50% Min at 15 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitt...

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SeekIC No. : 004466717 Detail

PTB 20095: Features: 15 Watts, 915960 MHz Class AB Characteristics Specified 25 Volts, 960 MHz Characteristics - Output Power = 15 Watts - Collector Efficiency = 50% Min at 15 Watts Gold Metallization Silicon ...

PTB 20095 Data Sheet

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Part Number:: PTB 20095
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

15 Watts, 915960 MHz
Class AB Characteristics
Specified 25 Volts, 960 MHz Characteristics
- Output Power = 15 Watts
- Collector Efficiency = 50% Min at 15 Watts
Gold Metallization
Silicon Nitride Passivated

Specifications

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	V_CER	40	V_dc
Collector-Base Voltage	V_CBO	50	V_dc
Emitter-Base Voltage (collector open)	V_EBO	4.0	V_dc
Collector Current (continuous)	I_C	6.7	A_dc
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by	P_D	65 0.4	Watts W/°C
Storage Temperature Range	T_stg	40 to +150	°C
Thermal Resistance (Tflange = 70° C)	R_qJC	2.7	°C/W

Description

The PTB 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, PTB 20095 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

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